rf2126 射频ic

3304xfq

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
  

Si BJT GaAs MESFET GaAs HBT
Si Bi-CMOS


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RF IN
RF IN
PC
VCC
RF OUT
RF OUT
RF OUT
RF OUT
BIAS
CIRCUIT
PACKAGE BASE
GND
RF2126
      
     

   
• 2.5GHz ISM Band Applications
• Digital Communication Systems
• PCS Communication Systems
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
The RF2126 is a high-power, high-efficiency, linear ampli-fier IC. The device is manufactured on an advanced Gal-lium Arsenide Heterojunction Bipolar Transistor (HBT)
process and has been designed for use as the final RF
amplifier in 2.45 GHz ISM applications such as WLAN
and POS terminals. The part will also function as the final
stage in digital PCS phone transmitters requiring linear
amplification operating between 1800 MHz and
2500 MHz. The device is packaged in an 8-lead plastic
package with a backside ground. The device is self-con-tained with the exception of the output matching network
and power supply feed line. It produces a typical output
power level of 1W.
• Single 3V to 6.5V Supply
• 1.3W Output Power
•12dB Gain
• 45% Efficiency
• Power Down Mode
• 1800MHz to 2500MHz Operation
RF2126 High Power Linear Amplifier
RF2126 PCBA Fully Assembled Evaluation Board

Rev A4 990429



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