DS_4GB_1.35V_DDR3_4Gb_E_die_UnbufferedSODIMM_Rev11

leopard

DS_4GB_1.35V_DDR3_4Gb_E_die_UnbufferedSODIMM_Rev11

• JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) Power Supply
• V
DDQ = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
• 400 MHz f
CK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin, 933MHz fCK for
1866Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9,10,11,13
• Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333),8 (DDR3-1600) and 9(DDR3-1866)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
write [either On the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower then TCASE 85C, 3.9us at 85C < TCASE 95C
• Asynchronous Reset




DS_4GB_1.35V_DDR3_4Gb_E_die_UnbufferedSODIMM_Rev11.pdf (987 KB, 下载次数: 3)

2016-6-16 08:55 上传

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tigerdiy2008

瞧瞧是不是PCB

antforum

有金手指封装下载吗？

ndzhzsbc

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