RF Power LDMOS Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Features• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13-inch Reel
60V电动车充电器原理图
OPA374 运算放大器
基于国产化芯片的脑电贴方案，为睡眠监测提
光敏电阻的标定，光强和电压ADC值曲线拟合
Altium Designer19 pcb几个问题
