MMRF2004NB datasheet

RF LDMOS Wideband Integrated Power Amplifier  


Features
 100% PAR Tested for Guaranteed Output Power Capability
 Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
 On--Chip Matching (50 Ohm Input, DC Blocked)
 Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
 Integrated ESD Protection
 225C Capable Plastic Package
 In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.

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