MRF7S35120HS datasheet

leopard · 发表于 2017-4-23 18:19:18

RF Power Field Effect Transistor

Features• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF7S35120HS.pdf (772 KB, 下载次数: 0)