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Mobile LPDDR3 SDRAM
Features
• Ultra-low-voltage core and I/O power supplies
• Frequency range
– 800 MHz (data rate: 1600 Mb/s/pin)
• 8n prefetch DDR architecture
• 8 internal banks for concurrent operation
• Multiplexed, double data rate, command/address
inputs; commands entered on each CK_t/CK_c
edge
• Bidirectional/differential data strobe per byte of
data (DQS_t/DQS_c)
• Programmable READ and WRITE latencies (RL/WL)
• Burst length: 8
• Per-bank refresh for concurrent operation
• Auto temperature-compensated self refresh
(ATCSR) by built-in temperature sensor
• Partial-array self refresh (PASR)
• Deep power-down mode (DPD)
• Selectable output drive strength (DS)
• Clock-stop capability
• On-die termination (ODT)
• Lead-free (RoHS-compliant) and halogen-free
packaging
EDF8132A1MC EDFA232A1MA178b_8 16gb_2c0f_mobile_lpddr3.pdf
(1.82 MB, 下载次数: 0)
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