H5PS1G63EFR 1Gb(64Mx16) DDR2 SDRAM datasheet_2

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H5PS1G63EFR 1Gb(64Mx16) DDR2 SDRAM

Key Features
• VDD = 1.8 +/- 0.1V
• VDDQ = 1.8 +/- 0.1V
• All inputs and outputs are compatible with SSTL_18 interface
• 8 banks
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
• Differential Data Strobe (DQS, DQS)
• Data outputs on DQS, DQS edges when read (edged DQ)
• Data inputs on DQS centers when write(centered DQ)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM mask write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
• Programmable CAS latency 3,4, 5, 6 and 7 supported
• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• Internal eight bank operations with single pulsed RAS
• Auto refresh and self refresh supported
• tRAS lockout supported
• 8K refresh cycles /64ms
• JEDEC standard 84ball FBGA(x16)
• Full strength driver option controlled by EMR
• On Die Termination supported
• Off Chip Driver Impedance Adjustment supported
• Read Data Strobe supported (x8 only)
• Self-Refresh High Temperature Entry
• Average Refresh Period 7.8us at lower than Tcase 85°C, 3.9us at 85°C<Tcase<95°C



H5PS1G63EFR 1Gb(64Mx16) DDR2 SDRAM datasheet_2.pdf (1.28 MB, 下载次数: 0)

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