|
马上注册,结交更多好友,享用更多功能,让你轻松玩转社区
您需要 登录 才可以下载或查看,没有账号?立即注册
×
K9F4G08U0A 512M x 8 Bit 1G x 8 Bit NAND Flash Memory
FEATURES
• Voltage Supply
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
• Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9F4G08U0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F4G08U0A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9K8G08U1A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
K9F4G08U0A 512M x 8 Bit 1G x 8 Bit NAND Flash Memory .pdf
(1.14 MB, 下载次数: 0)
|
|